In-vacancies in Si-doped InN
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Abstract
The introduction of vacancy type point defects by Si doping in InN grown by plasma-assisted molecular beam epitaxy was studied using a monoenergetic positron beam. With the combination of positron lifetime and Doppler broadening measurements, compensating In-vacancy (VIn) acceptors were identified in the material. For increasing Si doping an enhanced formation of VIn defects was observed, up to a concentration of cV = 7 × 1017 cm-3 in the highest doped sample (ne = 6.6 x 1020 cm-3). A strong inhomogeneity of the defect profile with a significant increase of the VIn concentration toward the layer/substrate interface could be detected. Additionally, larger vacancy clusters containing several VIn are formed in the proximity of the interface.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">In-vacancies in Si-doped InN</title><author><name sortKey="Rauch, C" uniqKey="Rauch C">C. Rauch</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Applied Physics, Aalto University, P.O. Box 11100</s1><s2>00076 Aalto, Espoo</s2><s3>FIN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>00076 Aalto, Espoo</wicri:noRegion></affiliation></author><author><name sortKey="Reurings, F" uniqKey="Reurings F">F. Reurings</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Applied Physics, Aalto University, P.O. Box 11100</s1><s2>00076 Aalto, Espoo</s2><s3>FIN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>00076 Aalto, Espoo</wicri:noRegion></affiliation></author><author><name sortKey="Tuomisto, F" uniqKey="Tuomisto F">F. Tuomisto</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Applied Physics, Aalto University, P.O. Box 11100</s1><s2>00076 Aalto, Espoo</s2><s3>FIN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>00076 Aalto, Espoo</wicri:noRegion></affiliation></author><author><name sortKey="Veal, T D" uniqKey="Veal T">T. D. Veal</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, University of Warwick</s1><s2>Coventry, CV4 7AL</s2><s3>GBR</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Coventry, CV4 7AL</wicri:noRegion></affiliation></author><author><name sortKey="Mcconville, C F" uniqKey="Mcconville C">C. F. Mcconville</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, University of Warwick</s1><s2>Coventry, CV4 7AL</s2><s3>GBR</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Coventry, CV4 7AL</wicri:noRegion></affiliation></author><author><name sortKey="Lu, H" uniqKey="Lu H">H. Lu</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Electrical and Computer Engineering, Cornell University</s1><s2>Ithaca, New York 14853</s2><s3>USA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Ithaca, New York 14853</wicri:noRegion></affiliation></author><author><name sortKey="Schaff, W J" uniqKey="Schaff W">W. J. Schaff</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Electrical and Computer Engineering, Cornell University</s1><s2>Ithaca, New York 14853</s2><s3>USA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Ithaca, New York 14853</wicri:noRegion></affiliation></author><author><name sortKey="Gallinat, C S" uniqKey="Gallinat C">C. S. Gallinat</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Materials Department, University of California</s1><s2>Santa Barbara, California 93106-5050</s2><s3>USA</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Santa Barbara, California 93106-5050</wicri:noRegion></affiliation></author><author><name sortKey="Koblm Ller, G" uniqKey="Koblm Ller G">G. Koblm Ller</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Materials Department, University of California</s1><s2>Santa Barbara, California 93106-5050</s2><s3>USA</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Santa Barbara, California 93106-5050</wicri:noRegion></affiliation></author><author><name sortKey="Speck, J S" uniqKey="Speck J">J. S. Speck</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Materials Department, University of California</s1><s2>Santa Barbara, California 93106-5050</s2><s3>USA</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Santa Barbara, California 93106-5050</wicri:noRegion></affiliation></author><author><name sortKey="Egger, W" uniqKey="Egger W">W. Egger</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Institute für Angewandte Physik und Messtechnik, Universität der Bundeswehr München</s1><s2>87755 Neubiberg</s2><s3>DEU</s3><sZ>11 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>87755 Neubiberg</wicri:noRegion><wicri:noRegion>Universität der Bundeswehr München</wicri:noRegion><wicri:noRegion>87755 Neubiberg</wicri:noRegion></affiliation></author><author><name sortKey="Lowe, B" uniqKey="Lowe B">B. Löwe</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Institute für Angewandte Physik und Messtechnik, Universität der Bundeswehr München</s1><s2>87755 Neubiberg</s2><s3>DEU</s3><sZ>11 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>87755 Neubiberg</wicri:noRegion><wicri:noRegion>Universität der Bundeswehr München</wicri:noRegion><wicri:noRegion>87755 Neubiberg</wicri:noRegion></affiliation></author><author><name sortKey="Ravelli, L" uniqKey="Ravelli L">L. Ravelli</name><affiliation wicri:level="1"><inist:fA14 i1="06"><s1>Dipartimento di Fisica, Universita degli studi di Trento</s1><s2>38123 Povo (TN)</s2><s3>ITA</s3><sZ>13 aut.</sZ></inist:fA14><country>Italie</country><wicri:noRegion>38123 Povo (TN)</wicri:noRegion></affiliation></author><author><name sortKey="Sojak, S" uniqKey="Sojak S">S. Sojak</name><affiliation wicri:level="1"><inist:fA14 i1="07"><s1>Department of Nuclear Physics and Technology, Slovak University of Technology in Bratislava</s1><s2>81219 Bratislava</s2><s3>SVK</s3><sZ>14 aut.</sZ></inist:fA14><country>Slovaquie</country><wicri:noRegion>81219 Bratislava</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">10-0292480</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 10-0292480 INIST</idno><idno type="RBID">Pascal:10-0292480</idno><idno type="wicri:Area/Main/Corpus">004311</idno><idno type="wicri:Area/Main/Repository">003F46</idno></publicationStmt><seriesStmt><idno type="ISSN">1862-6300</idno><title level="j" type="abbreviated">Phys. status solidi, A Appl. mater. sci. : (Print)</title><title level="j" type="main">Physica status solidi. A, Applications and materials science : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Acceptor center</term><term>Doping</term><term>Doppler broadening</term><term>Indium nitride</term><term>Interfacial layer</term><term>Molecular beam epitaxy</term><term>Point defects</term><term>Positron annihilation</term><term>Silicon additions</term><term>Vacancies</term><term>Vacancy cluster</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Lacune</term><term>Addition silicium</term><term>Défaut ponctuel</term><term>Dopage</term><term>Epitaxie jet moléculaire</term><term>Annihilation positon</term><term>Elargissement Doppler</term><term>Centre accepteur</term><term>Couche interfaciale</term><term>Amas lacune</term><term>Nitrure d'indium</term><term>InN</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The introduction of vacancy type point defects by Si doping in InN grown by plasma-assisted molecular beam epitaxy was studied using a monoenergetic positron beam. With the combination of positron lifetime and Doppler broadening measurements, compensating In-vacancy (V<sub>In</sub>) acceptors were identified in the material. For increasing Si doping an enhanced formation of V<sub>In</sub> defects was observed, up to a concentration of c<sub>V</sub> = 7 × 10<sup>17</sup> cm<sup>-3</sup> in the highest doped sample (n<sub>e</sub> = 6.6 x 10<sup>20</sup> cm<sup>-3</sup>). A strong inhomogeneity of the defect profile with a significant increase of the V<sub>In</sub> concentration toward the layer/substrate interface could be detected. Additionally, larger vacancy clusters containing several V<sub>In</sub> are formed in the proximity of the interface.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1862-6300</s0></fA01><fA03 i2="1"><s0>Phys. status solidi, A Appl. mater. sci. : (Print)</s0></fA03><fA05><s2>207</s2></fA05><fA06><s2>5</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>In-vacancies in Si-doped InN</s1></fA08><fA11 i1="01" i2="1"><s1>RAUCH (C.)</s1></fA11><fA11 i1="02" i2="1"><s1>REURINGS (F.)</s1></fA11><fA11 i1="03" i2="1"><s1>TUOMISTO (F.)</s1></fA11><fA11 i1="04" i2="1"><s1>VEAL (T. D.)</s1></fA11><fA11 i1="05" i2="1"><s1>MCCONVILLE (C. F.)</s1></fA11><fA11 i1="06" i2="1"><s1>LU (H.)</s1></fA11><fA11 i1="07" i2="1"><s1>SCHAFF (W. J.)</s1></fA11><fA11 i1="08" i2="1"><s1>GALLINAT (C. S.)</s1></fA11><fA11 i1="09" i2="1"><s1>KOBLMÜLLER (G.)</s1></fA11><fA11 i1="10" i2="1"><s1>SPECK (J. S.)</s1></fA11><fA11 i1="11" i2="1"><s1>EGGER (W.)</s1></fA11><fA11 i1="12" i2="1"><s1>LÖWE (B.)</s1></fA11><fA11 i1="13" i2="1"><s1>RAVELLI (L.)</s1></fA11><fA11 i1="14" i2="1"><s1>SOJAK (S.)</s1></fA11><fA14 i1="01"><s1>Department of Applied Physics, Aalto University, P.O. Box 11100</s1><s2>00076 Aalto, Espoo</s2><s3>FIN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics, University of Warwick</s1><s2>Coventry, CV4 7AL</s2><s3>GBR</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Electrical and Computer Engineering, Cornell University</s1><s2>Ithaca, New York 14853</s2><s3>USA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="04"><s1>Materials Department, University of California</s1><s2>Santa Barbara, California 93106-5050</s2><s3>USA</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></fA14><fA14 i1="05"><s1>Institute für Angewandte Physik und Messtechnik, Universität der Bundeswehr München</s1><s2>87755 Neubiberg</s2><s3>DEU</s3><sZ>11 aut.</sZ><sZ>12 aut.</sZ></fA14><fA14 i1="06"><s1>Dipartimento di Fisica, Universita degli studi di Trento</s1><s2>38123 Povo (TN)</s2><s3>ITA</s3><sZ>13 aut.</sZ></fA14><fA14 i1="07"><s1>Department of Nuclear Physics and Technology, Slovak University of Technology in Bratislava</s1><s2>81219 Bratislava</s2><s3>SVK</s3><sZ>14 aut.</sZ></fA14><fA20><s1>1083-1086</s1></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10183A</s2><s5>354000192980750110</s5></fA43><fA44><s0>0000</s0><s1>© 2010 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>16 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>10-0292480</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physica status solidi. A, Applications and materials science : (Print)</s0></fA64><fA66 i1="01"><s0>DEU</s0></fA66><fC01 i1="01" l="ENG"><s0>The introduction of vacancy type point defects by Si doping in InN grown by plasma-assisted molecular beam epitaxy was studied using a monoenergetic positron beam. With the combination of positron lifetime and Doppler broadening measurements, compensating In-vacancy (V<sub>In</sub>) acceptors were identified in the material. For increasing Si doping an enhanced formation of V<sub>In</sub> defects was observed, up to a concentration of c<sub>V</sub> = 7 × 10<sup>17</sup> cm<sup>-3</sup> in the highest doped sample (n<sub>e</sub> = 6.6 x 10<sup>20</sup> cm<sup>-3</sup>). A strong inhomogeneity of the defect profile with a significant increase of the V<sub>In</sub> concentration toward the layer/substrate interface could be detected. Additionally, larger vacancy clusters containing several V<sub>In</sub> are formed in the proximity of the interface.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60H55L</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H70B</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Lacune</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Vacancies</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Addition silicium</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Silicon additions</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Défaut ponctuel</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Point defects</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Dopage</s0><s5>05</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Doping</s0><s5>05</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Doping</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Annihilation positon</s0><s5>08</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Positron annihilation</s0><s5>08</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Elargissement Doppler</s0><s5>09</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Doppler broadening</s0><s5>09</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Centre accepteur</s0><s5>10</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Acceptor center</s0><s5>10</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Centro aceptor</s0><s5>10</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Couche interfaciale</s0><s5>13</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Interfacial layer</s0><s5>13</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Capa interfacial</s0><s5>13</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Amas lacune</s0><s5>14</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Vacancy cluster</s0><s5>14</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Montón laguna</s0><s5>14</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Nitrure d'indium</s0><s5>15</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Indium nitride</s0><s5>15</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Indio nitruro</s0><s5>15</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>InN</s0><s4>INC</s4><s5>52</s5></fC03><fN21><s1>186</s1></fN21></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>European Materials Research Society (E-MRS) </s1><s3>Warsaw POL</s3><s4>2009-09-14</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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